IRFZ34N Power MOSFET International Rectifier (Pack of 2)

IRFZ34N  International Rectifier's Fifth Generation HEXFETs use cutting-edge manufacturing methods to provide the lowest on-resistance per silicon area. This feature gives the designer a very effective device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for. Ultra Low On-Resistance, Dynamic dv/dT Rating, 175°C Operating Temperature, Fast Switching, and Ease of Paralleling are all characteristics of advanced process technology.

Features

• Its fully avalanche rated

• It has designed by advanced process technology

• Its dv/dT rating

• Its operating temperature is 175 degree centigrade

• Its power dissipation is 56W

Specification